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BUT12AF

Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0V 1000 V VCEO Collector-emitter voltage (open base) 450 V VEBO Emitter-base voltage(open collector) 5 V IC Collector current (DC) 8 A IB ...

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BUT12AF: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0V 1000 V VCEO Collector-emitter voltage (open base) 450 V ...

BUT12AF Data Sheet

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Part Number:
BUT12AF
Supply Ability:
5000

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Upload time: 2024/11/21

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Product Details

Description



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0V 1000 V
VCEO Collector-emitter voltage (open base) 450 V
VEBO Emitter-base voltage(open collector) 5 V
IC Collector current (DC) 8 A
IB Base current (DC) 4 A
IBM Base current peak value 8 A
Ptot Total power dissipation Tmb 25 40 W
Tstg Storage temperature -55 150
Tj Junction temperature 150





Description

Highvoltage,high-speed switching npn transistors BUT12AF in a metal envelope ,primarily for use in switching power circuits.




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