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Specifications SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V 850 V VCEO Collector-emitter voltage (open base) 400 V VEBO Emitter-base voltage(open collector) 5 V IC Collector current (DC) 8 A IB Bas...

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SeekIC No. : 004304650 Detail

BUT12: Specifications SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V 850 V VCEO Collector-emitter voltage (open base) 400 V VEB...

BUT12 Data Sheet

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Part Number:: BUT12
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Description

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CESM	Collector-emitter voltage peak value	V_BE = 0V		850	V
V_CEO	Collector-emitter voltage (open base)			400	V
V_EBO	Emitter-base voltage(open collector)			5	V
I_C	Collector current (DC)			8	A
I_B	Base current (DC)			4	A
I_BM	Base current peak value			8	A
P_tot	Total power dissipation	Tmb 25		100	W
T_stg	Storage temperature		-55	150
T_j	Junction temperature			150

Description

Highvoltage,high-speed switching npn transistors BUT12 in a metal envelope ,primarily for use in switching power circuits.

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BUT12

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