BUT11F/11AF

Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage :BUT11F :BUT11AF	850 1000	V
VCEO	Collector-Emitter Voltage :BUT11F :BUT11AF	400 450	V
VEBO	Emitter-Base Voltage	9	V
IC	Collector Current (DC)	5	A
ICP	*Collector Current (Pulse)	10	A
IB	Base Current (DC)	2	A
IBP	*Base Current (Pulse)	4	A
PC	Collector Dissipation TC= 25	100	W
TJ	Junction Temperature	150
TSTG	Storage Temperature	-65~150

Description

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN of BUT11F/11AF. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.