BUT11AF Selling Leads, Price trend, BUT11AF DataSheet download, circuit diagram from SeekIC.com

Specifications SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V 1000 V VCEO Collector-emitter voltage (open base) 450 V VEBO Emitter-base voltage(open collector) 5 V IC Collector current (DC) 5 A IB Ba...

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BUT11AF: Specifications SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCESM Collector-emitter voltage peak value VBE = 0V 1000 V VCEO Collector-emitter voltage (open base) 450 V VE...

BUT11AF Data Sheet

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Part Number:: BUT11AF
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/24

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Transistors Bipolar (BJT) NPN Si Transistor

Product Details

Description

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CESM	Collector-emitter voltage peak value	V_BE = 0V		1000	V
V_CEO	Collector-emitter voltage (open base)			450	V
V_EBO	Emitter-base voltage(open collector)			5	V
I_C	Collector current (DC)			5	A
I_B	Base current (DC)			2	A
I_BM	Base current peak value			4	A
P_tot	Total power dissipation	Tmb 25		40	W
T_stg	Storage temperature		-55	150
T_j	Junction temperature			150

Description

Highvoltage,high-speed switching npn transistors BUT11AF in a metal envelope ,primarily for use in switching power circuits.

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BUT11AF

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