Features: *Low forward voltage drop*High switching speed*Low tail current *Latch-up free*Including fast free- wheel diodePinoutSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltageRGE=20k VCGR 600 Gate-emitter voltage VGE ±20...
BUP410D: Features: *Low forward voltage drop*High switching speed*Low tail current *Latch-up free*Including fast free- wheel diodePinoutSpecifications Parameter Symbol Values Unit Collector-emitte...
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Parameter | Symbol | Values | Unit |
Collector-emitter voltage | VCE | 600 | V |
Collector-gate voltage RGE=20k |
VCGR | 600 | |
Gate-emitter voltage | VGE | ±20 | |
DC collector current TC=25 TC=90 |
IC | 13 8 | |
Pulsed collector current, tp=1ms TC=25 TC=90 |
ICpuls | 26 16 |
A |
Diode forward current TC=90 |
IF | 11 | |
Pulsed diode current, tp=1ms TC=25 |
IFpuls | 72 | |
Power dissipation TC=25 |
Ptot | 50 | W |
Chip or operating temperature | Tj | -55...+150 | |
Storage temperature | Tstg | -55...+150 | |
DIN humidity category, DIN 40 040 | - | E | - |
IEC climatic category, DIN IEC 68-1 | - | 55/150/56 |