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BUP314D

IGBT Transistors LOW LOSS DuoPack 1200V 25A

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BUP314D: IGBT Transistors LOW LOSS DuoPack 1200V 25A

BUP314D Data Sheet

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Part Number:
BUP314D
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-218-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-218-3


Features:

• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode


Specifications

Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage
RGE= 20 kΩ		 VCGR 1200
Gate-emitter voltage VGE ± 20
DC collector current, (limited by
bond wire)
TC= 60 °C
TC= 90 °C		 C 33
42		 A
Pulsed collector current,tp= 1 ms
TC= 25 °C
TC= 90 °C
 Cpuls 66
84
Diode forward current
TC= 90 °C		 F 28
Pulsed diode current,tp= 1 ms
TC= 25 °C		 Fpuls 168
Power dissipation
TC= 25 °C
 Ptot 300 W
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150



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