BUP314 Selling Leads, Price trend , Infineon Technologies, BUP314 DataSheet download, circuit diagram from SeekIC.com

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BUP314: IGBT Transistors TRANS IGBT CHIP N-CH 1200V, 52A

BUP314 Data Sheet

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Part Number:: BUP314
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/11/14

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Collector-Emitter Saturation Voltage :	2.2 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	50 A	Gate-Emitter Leakage Current :	600 nA
Power Dissipation :	190 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-247-3	Packaging :	Tube

Description

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 50 A
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Gate-Emitter Leakage Current : 600 nA
Power Dissipation : 190 W

Features:

*Low forward voltage drop
*High switching speed
*Low tail current
*Latch-up free
*Avalanche rated

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage R_GE=20k	V_CGR	1200
Gate-emitter voltage	V_GE	±20
DC collector current TC=25 TC=90	I_C	52 33	A
Pulsed collector current, t_p=1ms T_C=25 T_C=90	I_CPUls	104 66	A
Avalanche energy, single pulse I_C=10A, V_CC=24V, R_GE=25 L=200_UH, T_j=25	E_AS	65	mJ
Power dissipation T_C=25	P_tot	300	W
Chip or operating temperature	T_j	-55...+150
Storage temperature	T_stg	-55...+150
DIN humidity category, DIN40 040	-	E	-
I_EC climatic category, DIN I_EC 68-1	-	55/150/56	-

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BUP314

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