BUP313D Selling Leads, Price trend , Infineon Technologies, BUP313D DataSheet download, circuit diagram from SeekIC.com

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BUP313D: IGBT Transistors LOW LOSS DuoPack 1200V 15A

BUP313D Data Sheet

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Part Number:: BUP313D
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/14

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-218-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-218-3

Features:

*Low forward voltage drop
*High switching speed
*Low tail current
*Latch-up free
*Including fast free-wheel diode

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage RGE=20k	V_CGR	1200
Gate-emitter voltage	V_GE	±20
DC collector current TC=25 TC=90	I_C	32 20
Pulsed collector current, tp=1ms TC=25 TC=90	I_Cpuls	64 40	A
Diode forward current TC=90	I_F	18	A
Pulsed diode current, tp=1ms TC=25	I_Fpuls	108
Power dissipation TC=25	P_tot	200	W
Chip or operating temperature	T_j	-55...+150
Storage temperature	T_stg	-55...+150
DIN humidity category, DIN 40 040	-	E	-
IEC climatic category, DIN IEC 68-1	-	55/150/56	-

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BUP313D

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