BULT118

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 10
Emitter- Base Voltage VEBO : 9 V
Package / Case : SOT-32


Features:

*STMicroelectronicsPREFERRED SALESTYPE
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION
*VERYHIGHSWITCHINGSPEED


Application

*ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING
*FLYBACKANDFORWARDSINGLE TRANSISTORLOWPOWERCONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	700	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	2	A
ICM	Collector Peak Current (tP<5 ms)	4	A
IB	Base Current	1	A
IBM	Base Peak Current (tP<5 ms)	2	A
Ptot	Total Dissipation at Tc = 25	45	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

BULT118 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

BULT118 uses a Cellular Emitterstructure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

BULT118 is designed for use in lighting applications and low cost switch-mode power supplies.