Transistors Switching (Resistor Biased) High Voltage NPN 700V PWR Trans
BULK128D-B: Transistors Switching (Resistor Biased) High Voltage NPN 700V PWR Trans
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | NPN | Mounting Style : | SMD/SMT |
Package / Case : | SOT-82 | Collector- Emitter Voltage VCEO Max : | 400 V |
Power Dissipation : | 55000 mW | Maximum Operating Temperature : | + 150 C |
Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCES |
Collector-Emitter Voltage (VBE = 0) |
700 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
400 |
V |
VEBO |
Emitter-Base Voltage (IC = 0, IB < 2 A, tp < 10 ms Tj < 150) |
BVEBO |
V |
IC |
Collector Current |
4 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
8 |
A |
IB |
Base Current |
2 |
A |
IBM |
Base Peak Current (tp < 5 ms) |
4 |
A |
Ptot |
Total Dissipation at Tc = 25 |
55 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
BULK128D-B is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
BULK128D-B uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
BULK128D-B is designed for use in lighting applications and low cost switch-mode power supplies.