Features: *Designed Specifically for High FrequencyElectronic Ballasts up to 50 W*hFE7 to 21 at VCE=1 V, IC= 800 mA*Low Power Losses (On-state and Switching) *Key Parameters Characterised at High Temperature *Tight and Reproducible Parametric DistributionsSpecifications RATING SYMBOL VALUE ...
BUL770: Features: *Designed Specifically for High FrequencyElectronic Ballasts up to 50 W*hFE7 to 21 at VCE=1 V, IC= 800 mA*Low Power Losses (On-state and Switching) *Key Parameters Characterised at High Te...
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RATING | SYMBOL | VALUE | UNIT |
Collector-emitter voltage (VBE=0) |
VCES | 700 | V |
Collector-base voltage (IBE=0) |
VCBO | 700 | V |
Collector-emitter voltage (IB=0) |
VCEO | 400 | V |
Emitter-base voltage | VEBO | 9 | V |
Continuous collector current | IC | 2.5 | A |
Peak collector current (see Note 1) | ICM | 6 | A |
Peak collector current (see Note 2) | ICM | 8 | A |
Continuous base current | IB | 1.5 | A |
Peak base current (see Note 2) | IBM | 2.5 | A |
Continuous device dissipation at (or below) 25 case temperatue | Ptot | 50 | W |
Operating junction temperature range | Tj | -65 to +150 | |
Storage temperature range | Tstg | -65 to +150 |