Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
BUL742C: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 400 V | ||
Emitter- Base Voltage VEBO : | 12 V | Maximum DC Collector Current : | 4 A | ||
DC Collector/Base Gain hfe Min : | 48 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCES |
Collector-Emitter Voltage (VBE = 0) |
1050 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
400 |
V |
VEBO |
Emitter-Base Voltage (IC = 0, IB < 2 A, tp < 10 ms) |
V(BR)EBO |
V |
IC |
Collector Current |
4 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
8 |
A |
IB |
Base Current |
2 |
A |
IBM |
Base Peak Current (tp < 5 ms) |
4 |
A |
Ptot |
Total Dissipation at Tc = 25 |
70 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
BUL742C is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
Thanks to an increased intermediate layer, BUL742C has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.