BUL742

Features:

*HIGH VOLTAGE CAPABILITY
*LOW SPREAD OF DYNAMIC PARAMETERS
*MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
*VERY HIGH SWITCHING SPEED
*LARGE RBSOA




Application

*ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING
*SWITCH MODE POWER SUPPLIES




Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VBE= 0)	900	V
VCEO	Collector-Emitter Voltage (IB= 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	BVEBO	V
IC	Collector Current	4	A
ICM	Collector Peak Current (tP<5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tP<5 ms)	4	A
Ptot	Total Dissipation at Tc = 25	70	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BUL742 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
BUL742 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide RBSOA.
Thanks to an increased intermediate layer, BUL742  has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.