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BUL68B

Features: • Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.• Triple Guard R...

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SeekIC No. : 004304556 Detail

BUL68B: Features: • Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.• Ion implant and h...

BUL68B Data Sheet

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Part Number:
BUL68B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Rings for improved control of high voltages


Specifications

VCBO Collector - Base Voltage(IE =0)
 200V
VCEO Collector -Emitter Voltage (IB = 0)
100V
VEBO Emitter - Base Voltage (IC = 0)
 10V
IC Continuous Collector Current 12A
IC(PK) Peak Collector Current 17A
IB Base Current 5A
Ptot Total Dissipation at Tcase= 25 20W
Tstg Operating and Storage Temperature Range -55 to +150



Description

The BUL68B features are as follows:
*SEMEFAB DESIGNED AND DIFFUSED DIE
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING


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