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BUL54ASMD

Features: Multi-Cbase design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.Ion implant and high accuracy masking for tight control of characteristics from batch to batch.Triple Guard Rings for improv...

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SeekIC No. : 004304530 Detail

BUL54ASMD: Features: Multi-Cbase design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.Ion implant and high acc...

BUL54ASMD Data Sheet

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Part Number:
BUL54ASMD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

Multi-Cbase design for efficient energy distribution across the chip resulting in  significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.


Specifications

 VCBO  Collector- Base Voltage  1000V
 VCEO  Collector- Emitter Voltage(IB=0)  500V
 VEBO  Emitter- Base Voltage  10V
 IC  Collector Current  2A
 IC(PK)  Peak Collector Current  4A
 IB  Base Current  0.8A
 Ptot  Total Dissipation at Tcase=25
 Derate above 25 when usde on efficient heatsink		  35W
 Tstg  Operating and Storage Temperature Range  0.2W/
 -65 to 200
 R
th		  Thermal Resistance Junction - Case  3.5W



Description

The BUL54ASMD features are as follows:

*SEMEFAB DESIGNED AND DIFFUSED DIE
*HIGH VOLTAGE
*FAST SWITCHING (tf = 40ns)
*EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE
*HIGH ENERGY RATING
*EFFICIENT POWER SWITCHING
*MILITARY AND HI¨CREL OPTION




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