Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
BUL416: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 800 V | ||
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 6 A | ||
DC Collector/Base Gain hfe Min : | 10 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage (VBE= 0) | 1600 | V |
VCEO | Collector-Emitter Voltage (IB= 0) |
800 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 9 | V |
IC | Collector Current | 6 | A |
ICM | Collector Peak Current (tP<5 ms) | 9 | A |
IB | Base Current | 5 | A |
IBM | Base Peak Current (tP<5 ms) | 8 | A |
Ptot | Total Dissipation at Tc = 25 | 110 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |