Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
BUL216: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 800 V | ||
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 4 A | ||
DC Collector/Base Gain hfe Min : | 12 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage (VBE= 0) | 1600 | V |
VCEO | Collector-Emitter Voltage (IB= 0) |
800 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 9 | V |
IC | Collector Current | 4 | A |
ICM | Collector Peak Current (tP<5 ms) | 6 | A |
IB | Base Current | 2 | A |
IBM | Base Peak Current (tP<5 ms) | 4 | A |
Ptot | Total Dissipation at Tc = 25 | 90 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
Technical/Catalog Information | BUL216 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 800V |
Current - Collector (Ic) (Max) | 4A |
Power - Max | 90W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 400mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 250A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUL216 BUL216 497 2638 5 ND 49726385ND 497-2638-5 |