MOSFET TRENCH 31V-99V G3
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 18 A | ||
Resistance Drain-Source RDS (on) : | 0.036 Ohms | Configuration : | Single Triple Source | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-669 | Packaging : | Reel |
Technical/Catalog Information | BUK9Y40-55B,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 26A |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1020pF @ 25V |
Power - Max | 59W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 11nC @ 5V |
Package / Case | LFPak-4 |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT669; ; 4 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUK9Y40 55B,115 BUK9Y4055B,115 |