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BUK9Y30-75B

Features: ` Very low on-state resistance `Q101 compliant`175 rated ` Logic level compatible.Application· Automotive systems · 12 V, 24 V, and 42 V loads· Motors, lamps and solenoids · General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-s...

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BUK9Y30-75B: Features: ` Very low on-state resistance `Q101 compliant`175 rated ` Logic level compatible.Application· Automotive systems · 12 V, 24 V, and 42 V loads· Motors, lamps and solenoids · General purpo...

BUK9Y30-75B Data Sheet

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Part Number:
BUK9Y30-75B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` Very low on-state resistance
`Q101 compliant
`175   rated
` Logic level compatible.


Application

· Automotive systems
· 12 V, 24 V, and 42 V loads
· Motors, lamps and solenoids
· General purpose power switching.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 75 V
VDGR drain-gate voltage (DC) RGS = 20 k - 75 V
VGS gate-source voltage (DC) - ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 5V;
Figure 2 and 3
-
 30

A
Tmb = 100 ; VGS = 5 V; Figure 2 - 21 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 120 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 75 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25





-


30
A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 120 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID =30A;
VDS 75V; VGS = 5 V;
RGS = 50 ; starting Tmb= 25 		- 89 mJ
EDS(AL)R repetitive drain-source avalanche
energy		   - [1] -
[1] Max value not quoted. Repetitive rating defined in Figure 16.
Single-shot avalanche rating limited by Tj(max) of 175 .
Repetitive avalanche rating limited by Tj(avg) of 170 .
Refer to http://www.semiconductors.philips.com/acrobat/applicationnotes/AN10273_1.pdf for further information.



Description

N-channel enhancement mode field-effect power transistor BUK9Y30-75B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.




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