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BUK9Y19-55B

Features: ` Very low on-state resistance ` Q101 compliant`175 rated ` Logic level compatible.Application· Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids · General purpose power switching.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source v...

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BUK9Y19-55B: Features: ` Very low on-state resistance ` Q101 compliant`175 rated ` Logic level compatible.Application· Automotive systems ·12 V and 24 V loads· Motors, lamps and solenoids · General purpose powe...

BUK9Y19-55B Data Sheet

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Part Number:
BUK9Y19-55B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` Very low on-state resistance
` Q101 compliant
`175 rated
` Logic level compatible.


Application

· Automotive systems
·12 V and 24 V loads
· Motors, lamps and solenoids
· General purpose power switching.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 5V;
Figure 2 and 3
-
 40

A
Tmb = 100 ; VGS = 5 V; Figure 2 - 28 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 160 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 75 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25





-


40
A
IDRM peak reverse drain current Tmb= 25 ; pulsed; tp 10 s - 160 A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy unclamped inductive load; ID =40A;
VDS 55V; VGS = 5 V;
RGS = 50 ; starting Tmb= 25 		- 91 mJ
EDS(AL)R repetitive drain-source avalanche
energy		   - [1] -
[1] Maximum value not quoted. Repetitive rating defined in Figure 16.
Single-shot avalanche rating limited by Tj(max) of 175 .
Repetitive avalanche rating limited by Tj(avg) of 170 .
Refer to http://www.semiconductors.philips.com/acrobat/applicationnotes/AN10273_1.pdf for further information.



Description

N-channel enhancement mode field-effect power transistor BUK9Y19-55B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.




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