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BUK9E06-55B,127

MOSFET HIGH PERF TRENCHMOS

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SeekIC No. : 00155706 Detail

BUK9E06-55B,127: MOSFET HIGH PERF TRENCHMOS

BUK9E06-55B,127 Data Sheet

floor Price/Ceiling Price

US $ .76~.79 / Piece | Get Latest Price
Part Number:
BUK9E06-55B,127
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~3910
  • 3910~6000
  • Unit Price
  • $.79
  • $.76
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 15 V Continuous Drain Current : 146 A
Resistance Drain-Source RDS (on) : 0.0054 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0054 Ohms
Gate-Source Breakdown Voltage : 15 V
Continuous Drain Current : 146 A


Parameters:

Technical/Catalog InformationBUK9E06-55B,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs5.4 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 7565pF @ 25V
Power - Max258W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 5V
Package / CaseI²Pak, TO-220AB (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number568; SOT226; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUK9E06 55B,127
BUK9E0655B,127



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