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BUK9E06-55B

MOSFET HIGH PERF TRENCHMOS

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SeekIC No. : 00162915 Detail

BUK9E06-55B: MOSFET HIGH PERF TRENCHMOS

BUK9E06-55B Data Sheet

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Part Number:
BUK9E06-55B
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 15 V Continuous Drain Current : 146 A
Resistance Drain-Source RDS (on) : 0.0054 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Rail    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0054 Ohms
Packaging : Rail
Gate-Source Breakdown Voltage : 15 V
Continuous Drain Current : 146 A


Features:

* TrenchMOS™ technology
* 175  rated
* Q101 compliant
* Logic level compatible.


Application

* Automotive systems
* Motors, lamps and solenoids
* 12 V and 24 V loads
* General purpose power switching.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC)     55 V
VDGR drain-gate voltage (DC) RGS = 20 kW   55 V
VGS gate-source voltage (DC)     ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3   146 A
  75 A
Tmb = 100 ; VGS = 5 V; Figure 2   75 A
IDM peak drain current Tmb = 25 ; pulsed; tp  10 ms; Figure 3   587 A
Ptot total power dissipation Tmb = 25 ; Figure 1   258 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175



Description

N-channel enhancement mode field-effect power transistor BUK9E06-55B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.




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