Features: · TrenchMOS™ technology· Q101 compliant· 175 °C rated· Logic level compatible.Application· Automotive and general purpose power switching: · 12 V loads · Motors, lamps and solenoids.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-...
BUK9E04-40A: Features: · TrenchMOS™ technology· Q101 compliant· 175 °C rated· Logic level compatible.Application· Automotive and general purpose power switching: · 12 V loads · Motors, lamps and solenoids....
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
- |
40 |
V | |
VDGR |
drain-gate voltage (DC) | RGS = 20 k |
- |
40 |
V |
VGS |
gate-source voltage (DC) |
- |
±15 |
V | |
ID |
drain current (DC) | Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 |
- |
198 |
A |
- |
75 |
A | |||
Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
A | ||
IDM |
drain current (peak value) | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
794 |
A |
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
300 |
W |
Tstg |
storage temperature |
-55 |
+175 |
°C | |
Tj |
junction temperature |
-55 |
+175 |
°C | |
Source-drain diode | |||||
IDR
|
reverse drain current (DC) | Tmb = 25 °C |
- |
198 |
A |
- |
75 |
A | |||
IDRM |
pulsed reverse drain current | Tmb = 25 °C; tp 10 s |
- |
794 |
A |
Avalanche ruggedness | |||||
WDSS |
non-repetitive avalanche energy | unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 5 V; RGS = 50 k; starting Tmb = 25 °C |
- |
1.6 |
mJ |
N-channel enhancement mode field-effect power transistor BUK9E04-40A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK);
BUK9E04-40A in SOT226 (I2-PAK).