MOSFET TRENCHPLUS MOSFET
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | 15 V | Continuous Drain Current : | 140 A | ||
Resistance Drain-Source RDS (on) : | 0.0062 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Rail |
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
- |
55 |
V | |
VDGS |
drain-gate voltage (DC) |
- |
55 |
V | |
VGS |
gate-source voltage (DC) |
- |
±15 |
V | |
ID |
drain current (DC) | Tmb = 25 °C; VGS = 5 V;Figure 2 and 3 |
- |
140 |
A |
Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
A | ||
- |
75 |
S | |||
IDM |
drain current (peak value) | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
560 |
A |
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
272 |
W |
IGS(CL) |
gate-source clamping current | continuous |
- |
10 |
mA |
tp = 5 ms; = 0.01 |
- |
50 |
mA | ||
Visol(FET-TSD) | FET to temperature sense diode isolation voltage |
- |
±100 |
V | |
Tstg |
storage temperature |
-55 |
+175 |
°C | |
Tj |
junction temperature |
-55 |
+175 |
°C | |
Source-drain diode | |||||
IDR
|
reverse drain current (DC) | Tmb = 25 °C |
- |
140 |
A |
- |
75 |
A | |||
IDRM |
pulsed reverse drain current | Tmb = 25 °C; tp 10 s |
- |
560 |
A |
Avalanche ruggedness | |||||
EDS(CL)S |
non-repetitive drain-source clamping energy | unclamped inductive load; ID = 75 A; VDS 55 V; VGS = 5 V; RGS = 50 k; starting Tmb = 25 °C |
- |
500 |
mJ |
N-channel enhancement mode field-effect power transistor BUK9907-55ATE in a plastic package using TrenchMOS™ technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing.
Product availability:
BUK9107-55ATE in SOT426 (D2-PAK)
BUK9907-55ATE in SOT263B.