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BUK9907-40ATC: MOSFET TRENCHPLUS MOSFET

BUK9907-40ATC Data Sheet

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Part Number:: BUK9907-40ATC
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/12/21

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	40 V
Gate-Source Breakdown Voltage :	15 V	Continuous Drain Current :	140 A
Resistance Drain-Source RDS (on) :	0.0062 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Rail

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0062 Ohms
Packaging : Rail
Continuous Drain Current : 140 A
Gate-Source Breakdown Voltage : 15 V

Features:

` Typical on-state resistance 5.8 m
` Q101 compliant
` ESD and overvoltage protection
` Monolithically integrated temperature sensor for overload protection.

Application

·Automotive and power switching:
·12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)
· Protected drive for lamps.

Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
V_DS	drain-source voltage (DC)		-	40	V
V_DGS	drain-gate voltage (DC)	I_DG = 250 A	-	40	V
V_GS	gate-source voltage (DC)		-	±15	V
I_D	drain current (DC)	T_mb= 25 °C; V_GS= 5 V; Figure 2 and 3	-	140	A
		T_mb= 25 °C; V_GS= 5 V; Figure 2 and 3	-	75	A
		T_mb = 100 °C; V_GS= 5 V; Figure 2	-	75	A
I_DM	drain current (peak value)	T_mb = 25 °C; pulsed; t_p 10 s;Figure 3	-	560	A
P_tot	total power dissipation	T_mb = 25 °C; Figure 1	-	272	W
I_DG(CL)	drain-gate clamping current	t_p = 5 ms; = 0.01	-	50	mA
I_GS(CL)	gate-source clamping current	continuous	-	10	mA
I_GS(CL)	gate-source clamping current	t_p = 5 ms; = 0.01	-	50	mA
V_{isol(FET-TSD)}	FET to temperature sense diode isolation voltage		-	±100	V
Tstg	storage temperature		-55	+175	°C
Tj	junction temperature		-55	+175	°C
Source-drain diode
I_DR	reverse drain current (DC)	T_mb= 25 °C	-	140	A
	reverse drain current (DC)	T_mb= 25 °C	-	75	A
I_DRM	pulsed reverse drain current	T_mb = 25 °C; tp 10 s	-	560	A
Clamping
E_DS(CL)S	non-repetitive drain-source clamping energy	unclamped inductive load; I_D = 75 A; V_DS 40 V; V_GS= 5 V; R_GS = 10 k; starting T_j = 25 °C	-	1.4	J
Electrostatic Discharge
V_esd	electrostatic discharge voltage; pins 1,3,5	Human Body Model; C = 100 pF; R = 1.5 k	-	6	kv

[1] Voltage is limited by clamping
[2] Current is limited by power dissipation chip rating
[3] Continuous current is limited by package.

Description

N-channel enhancement mode field-effect power transistor BUK9907-40ATC in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing.

Product availability:BUK9907-40ATC in SOT263B

BUK9907-40ATC

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