Features: · TrenchMOS™ technology· Q101 compliant· 175 · rated· Logic level compatible.Application· Automotive and general purpose power switching:·12 V and 24 V loads· Motors, lamps and solenoids.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage ...
BUK9624-55A: Features: · TrenchMOS™ technology· Q101 compliant· 175 · rated· Logic level compatible.Application· Automotive and general purpose power switching:·12 V and 24 V loads· Motors, lamps and solen...
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 55 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±10 | V | |
VGSM | non-repetitive gate-source voltage | tp 50 s | - | ±15 | V |
ID | drain current (DC) | Tmb = 25 ; VGS = 5V; Figure 2 and 3 |
- |
46 |
A |
Tmb = 100 ; VGS = 5 V; Figure 2 | - | 33 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 188 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 105 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb= 25 |
- |
|
A |
IDRM | pulsed reverse drain current | Tmb= 25 ; pulsed; tp 10 s | - | 188 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy | unclamped inductive load; ID =46A; VDS 25V; VGS = 5 V; RGS = 50 ; starting Tmb= 25 |
- | 76 | mJ |
N-channel enhancement mode field-effect power transistor BUK9624-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK9524-55A in SOT78 (TO-220AB) BUK9624-55A in SOT404 (D 2-PAK).