Application·These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and a...
BUK9624-55: Application·These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips...
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 55 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 55 | V |
±VGS | Gate-source voltage | - | - | 10 | V |
ID | Drain current (DC) | Tmb = 25 | - | 45 | A |
ID | Drain current (DC) | Tmb = 100 | - | 31 | A |
IDM | Drain current (pulse peak value) | Tmb = 25 | - | 180 | A |
Ptot | Total power dissipation | Tmb = 25 | - | 103 | W |
TstgTj | Storage & operating temperature | - | -55 | 175 |
N-channel enhancement mode logiclevel field-effect power transistor BUK9624-55 in a plastic envelope suitable for surfacemounting. Using 'trench' technologythe device features very low on-stateresistance and has integral zenerdiodes giving ESD protection up to2kV. It is intended for use inautomotive and general purposeswitching applications.