PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current (DC)Drain current (pulse peak value)Total power dissipationStorage & operating temperature -RGS...
BUK9614-3: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSVDGR±VGSIDIDIDMPtotTstg, Tj Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current ...
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS =20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - -55 |
30 30 10 69 48 240 125 175 |
V V V A A A W |
N-channel enhancement mode logic level field-effect power transistor BUK9614-3 in a plastic envelope suitable for surface mounting using 'trench' technology. Thedevice features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.