Features: ` TrenchMOS™ technology` Q101 compliant` 175 rated` Logic level compatible.Application· Automotive and general purpose power switching:·12 V and 24 V loads·Motors, lamps and solenoids.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (D...
BUK9611-55A: Features: ` TrenchMOS™ technology` Q101 compliant` 175 rated` Logic level compatible.Application· Automotive and general purpose power switching:·12 V and 24 V loads·Motors, lamps and solenoi...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 55 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±10 | V | |
VGSM | non-repetitive gate-source voltage | tp 50 s | ±15 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 |
- | 75 61 |
A A |
Tmb = 100 ; VGS = 5 V; Figure 2 | 266 | A | |||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 166 | W |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | -55 | +175 | |
Tstg | storage temperature | ||||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb = 25 |
- |
75 | A |
IDRM | peak reverse drain current | Tmb = 25 ; pulsed; tp 10 s | - | 260 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy | unclamped inductive load; ID =75 A; VDS 55 V; VGS = 5 V; RGS = 50 ; starting Tmb = 25 |
- | 330 | mJ |
N-channel enhancement mode field-effect power transistor BUK9611-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK).