MOSFET HIGH PERF TRENCHMOS
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | 15 V | Continuous Drain Current : | 110 A | ||
Resistance Drain-Source RDS (on) : | 0.007 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-404 | Packaging : | Reel |
Technical/Catalog Information | BUK9608-55B,118 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 75A |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 5280pF @ 25V |
Power - Max | 203W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 45nC @ 5V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT404; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUK9608 55B,118 BUK960855B,118 |