Features: `TrenchMOS™ technology`Q101 compliant` 175 rated` Logic level compatible.Application· Automotive and general purpose power switching: · 12 V and 24 V loads · Motors, lamps and solenoids.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS ...
BUK9608-55A: Features: `TrenchMOS™ technology`Q101 compliant` 175 rated` Logic level compatible.Application· Automotive and general purpose power switching: · 12 V and 24 V loads · Motors, lamps and soleno...
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
drain-source voltage (DC) |
- |
55 |
V | |
VDGR |
drain-gate voltage (DC) | RGS = 20 k |
- |
55 |
V |
VGS |
gate-source voltage (DC) |
- |
±15 |
V | |
ID |
drain current (DC) | Tmb = 25; VGS = 5 V; Figure 2 and 3 |
(1)- |
125 |
A |
(2)- |
75 |
A | |||
Tmb = 100; VGS = 5 V; Figure 2 |
(2)- |
75 |
A | ||
IDM |
peak drain current | Tmb = 25; pulsed; tp 10 s; Figure 3 |
- |
503 |
A |
Ptot |
total power dissipation | Tmb = 2; Figure 1 |
- |
253 |
W |
Tstg |
Storage temperature |
-55 |
+175 |
||
Tj |
junction temperature |
-55 |
+175 |
||
Source-drain diode | |||||
IDR |
reverse drain current (DC) | Tmb = 25 |
(1)- |
125 |
A |
(2)- |
75 |
A | |||
IDRM |
peak reverse drain current | Tmb = 25; pulsed; tp 10 s |
- |
503 |
A |
Avalanche ruggedness | |||||
EDS(AL)S |
non-repetitive drain-source avalanche energy |
unclamped inductive load; ID =75 A; VDS 55V; VGS = 5 V; RGS = 50; starting Tmb= 25 |
- |
670 |
mJ |
N-channel enhancement mode field-effect power transistor BUK9608-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9508-55A in SOT78 (TO-220AB)
BUK9608-55A in SOT404 (D2-PAK).