BUK9607-30B,118

MOSFET HIGH PERF TRENCHMOS

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BUK9607-30B,118: MOSFET HIGH PERF TRENCHMOS

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US $ .39~.39 / Piece | Get Latest Price
Part Number:
BUK9607-30B,118
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~3590
  • Unit Price
  • $.39
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 108 A
Resistance Drain-Source RDS (on) : 0.005 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOT-404 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 15 V
Resistance Drain-Source RDS (on) : 0.005 Ohms
Package / Case : SOT-404
Continuous Drain Current : 108 A


Parameters:

Technical/Catalog InformationBUK9607-30B,118
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 3373pF @ 25V
Power - Max157W
PackagingTube
Gate Charge (Qg) @ Vgs32nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number568; SOT404; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUK9607 30B,118
BUK960730B,118



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