Features: · Very low on-state resistance · Q101 compliant· 175 °C rated · Logic level compatible.Application· Automotive systems · 12 V, 24 V, and 42 V loads· Motors, lamps and solenoids · General purpose power switching.PinoutSpecifications Symbol Parameter Conditions Min Max ...
BUK9606-75B: Features: · Very low on-state resistance · Q101 compliant· 175 °C rated · Logic level compatible.Application· Automotive systems · 12 V, 24 V, and 42 V loads· Motors, lamps and solenoids · General p...
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
- |
75 |
V | |
VDGR |
drain-gate voltage (DC) | RGS = 20 k |
- |
75 |
V |
VGS |
gate-source voltage (DC) |
- |
±15 |
V | |
ID |
drain current (DC) | Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 |
- |
153 |
A |
- |
75 |
A | |||
Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
A | ||
IDM |
drain current (peak value) | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
612 |
A |
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
300 |
W |
Tstg |
storage temperature |
-55 |
+175 |
°C | |
Tj |
junction temperature |
-55 |
+175 |
°C | |
Source-drain diode | |||||
IDR |
reverse drain current (DC) | Tmb = 25 °C |
- |
153 |
A |
- |
75 |
A | |||
IDRM |
pulsed reverse drain current | Tmb = 25 °C; tp 10 s |
- |
612 |
A |
Avalanche ruggedness | |||||
EDS(AL)S |
non-repetitive drain-source clamping energy |
unclamped inductive load; ID = 75 A; VDS 75 V; VGS = 5 V; RGS = 50 k; starting Tj = 25 °C |
- |
852 |
J |
N-channel enhancement mode field-effect power transistor BUK9606-75B in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
Product availability:
BUK9506-75B in SOT78 (TO-220AB)
BUK9606-75B in SOT404 (D2-PAK).