Features: *TrenchMOS™ technology* 175 rated* Q101 compliant* Logic level compatible.Application*Automotive systems* Motors, lamps and solenoids* 12 V and 24 V loads* General purpose power switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source v...
BUK96-55B: Features: *TrenchMOS™ technology* 175 rated* Q101 compliant* Logic level compatible.Application*Automotive systems* Motors, lamps and solenoids* 12 V and 24 V loads* General purpose power swit...
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 55 | V | ||
VDGR | drain-gate voltage (DC) | RGS = 20 kW | 55 | V | |
VGS | gate-source voltage (DC) | ±15 | V | ||
ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | 146 | A | |
75 | A | ||||
Tmb = 100 ; VGS = 5 V; Figure 2 | 75 | A | |||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 ms; Figure 3 | 587 | A | |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | 258 | W | |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 |
N-channel enhancement mode field-effect power transistor BUK96-55B in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.