MOSFET RAIL PWR-MOS
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.068 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Rail |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 55 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±10 | V | |
VGSM | non-repetitive gate-source voltage | tp 50 s | - | ±15 | V |
ID | drain current (DC) | Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 | - | 20 | A |
Tmb = 100 °C; VGS = 5 V; Figure 2 | - | 14 | A | ||
IDM | peak drain current | Tmb = 25 °C; pulsed; tp 10 s ; Figure 3 | - | 81 | A |
Ptot | total power dissipation | Tmb = 25 °C; Figure 1 | - | 62 | W |
Tstg | storage temperature | -55 | +175 | °C | |
Tj | operating junction temperature | -55 | +175 | °C | |
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb = 25 °C | - | 20 | A |
IDRM | pulsed reverse drain current | Tmb = 25 °C; pulsed; tp 10 s | - | 81 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy | unclamped inductive load; ID = 12 A; VDS 55 V; VGS = 5 V; RGS = 50 ; starting Tmb = 25 °C |
- | 72 | mJ |