BUK9529-100B,127, US $ .47-.6 , NXP Semiconductors, BUK9529-100B,127 DataSheet download, circuit diagram from SeekIC.com

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BUK9529-100B,127: MOSFET HIGH PERF TRENCHMOS

BUK9529-100B,127 Data Sheet

US $ .47~.6 / Piece | Get Latest Price

Part Number:: BUK9529-100B,127
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/11/20

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 15 V	Continuous Drain Current :	46 A
Resistance Drain-Source RDS (on) :	0.027 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 0.027 Ohms

Parameters:

Technical/Catalog Information	BUK9529-100B,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	46A
Rds On (Max) @ Id, Vgs	27 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	4360pF @ 25V
Power - Max	157W
Packaging	Tube
Gate Charge (Qg) @ Vgs	33nC @ 5V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Drawing Number	568; SOT78; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUK9529 100B,127 BUK9529100B,127

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BUK9529-100B,127

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