BUK9520-55,127

MOSFET N-CH 55V 52A SOT78

product image

BUK9520-55,127 Picture
SeekIC No. : 003432249 Detail

BUK9520-55,127: MOSFET N-CH 55V 52A SOT78

floor Price/Ceiling Price

Part Number:
BUK9520-55,127
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 52A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Power - Max: 116W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 52A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 2V @ 1mA
Drain to Source Voltage (Vdss): 55V
Power - Max: 116W
Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 5V


Parameters:

Technical/Catalog InformationBUK9520-55,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C52A
Rds On (Max) @ Id, Vgs20 mOhm @ 25A, 5V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max116W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Drawing Number568; SOT78; ; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUK9520 55,127
BUK952055,127



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Inductors, Coils, Chokes
Boxes, Enclosures, Racks
LED Products
Cables, Wires - Management
Prototyping Products
DE1
Discrete Semiconductor Products
View more