MOSFET N-CH 55V 57A SOT78
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Series: | TrenchMOS™ | Manufacturer: | NXP Semiconductors | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 57A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 25A, 5V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2V @ 1mA | Gate Charge (Qg) @ Vgs: | - | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2600pF @ 25V | ||
Power - Max: | 125W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 | Supplier Device Package: | TO-220AB |
Technical/Catalog Information | BUK9518-55,127 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 57A |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 25A, 5V |
Input Capacitance (Ciss) @ Vds | 2600pF @ 25V |
Power - Max | 125W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-220AB |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT78; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUK9518 55,127 BUK951855,127 |