MOSFET RAIL PWR-MOS
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 66 A | ||
Resistance Drain-Source RDS (on) : | 0.015 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Rail |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 55 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 55 | V |
±VGS | Gate-source voltage | - | - | 10 | V |
±VGSM | Non-repetitive gate-source voltage | tp50S | - | 15 | V |
ID | Drain current (DC) | Tmb = 25 | - | 66 | A |
ID | Drain current (DC) | Tmb = 100 | - | 46 | A |
IDM | Drain current (pulse peak value) | Tmb = 25 | - | 263 | A |
Ptot | Total power dissipation | Tmb = 25 | - | 138 | W |
TstgTj | Storage & operating temperature | - | -55 | 175 |
N-channel enhancement mode logiclevel field-effect power transistor BUK9516-55A in a plastic envelope available inTO220AB and SOT404 . Using'trench' technology which featuresvery low on-state resistance. It isintended for use in automotive andgeneral purpose switchingapplications.