MOSFET RAIL PWR-MOS
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 13 A | ||
Resistance Drain-Source RDS (on) : | 0.137 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | BUK95150-55A,127 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Rds On (Max) @ Id, Vgs | 137 mOhm @ 13A, 10V |
Input Capacitance (Ciss) @ Vds | 339pF @ 25V |
Power - Max | 53W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-220AB |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT78; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUK95150 55A,127 BUK9515055A,127 |