MOSFET RAIL PWR-MOS
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 73 A | ||
Resistance Drain-Source RDS (on) : | 0.013 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Rail |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | − | 55 | V | |
VDGR | drain-gate voltage (DC) | RGS =20kΩ | − | 55 | V |
VGS | gate-source voltage (DC) | − | ±10 | V | |
VGSM | non-repetitive gate-source voltage | tp 50 µs | − | ±15 | V |
ID | drain current (DC) | Tmb =25 °C; VGS =5V; | − | 73 | A |
Tmb = 100 °C; VGS =5V; | − | 52 | A | ||
IDM | peak drain current | Tmb =25 °C; pulsed; tp 10 µs; | − | 266 | A |
Ptot | total power dissipation | Tmb =25 °C; | − | 149 | W |
Tstg | storage temperature | −55 | +175 | °C | |
Tj | operating junction temperature | −55 | +175 | °C | |
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb =25 °C | − | 73 | A |
IDRM | pulsed reverse drain current | Tmb =25 °C; pulsed; tp 10 µs | − | 266 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy | unclamped inductive load; ID =73A; VDS 55 V; VGS =5V; RGS =50 Ω; starting Tmb =25 °C | − | 230 | mJ |
N-channel enhancement mode field-effect power transistor BUK9514-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9514-55A in SOT78 (TO-220AB)
BUK9614-55A in SOT404 (D 2-PAK).