Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Gate-Source Breakdown Voltage
: +/- 15 V
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 75 A
Packaging
: Rail
Resistance Drain-Source RDS (on)
: 0.009 Ohms
Features: · TrenchMOS™ technology
· Q101 compliant
· 175 °C rated
· Logic level compatible.Application` Automotive and general purpose power switching:
- 12 V and 24 V loads
- Motors, lamps and solenoidsPinout
Specifications
| Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
|
- |
55 |
V |
| VDGR |
drain-gate voltage (DC) |
RGS = 20 k |
- |
55 |
V |
| VGS |
gate-source voltage (DC) |
|
- |
+15 |
V |
| ID |
drain current (DC) |
Tmb = 25; VGS = 5 V [1]
Figure 2 and 3 [2] |
- |
100 |
A |
| - |
75 |
A |
| Tmb = 100C; VGS = 5 V; Figure 2 [2] |
- |
70 |
A |
| IDM |
peak drain current |
Tmb = 25; pulsed; tp 10 s
Figure 3 |
- |
400 |
A |
| Ptot |
total power dissipation |
Tmb = 25 °C; Figure 1 |
- |
200 |
W |
| Tstg |
storage temperature |
|
-55 |
+175 |
|
| Tj |
operating junction temperature |
|
-55 |
+175 |
|
| Source-drain diode |
| IDR |
reverse drain current (DC) |
Tmb = 25 [1] |
- |
100 |
A |
| [2] |
- |
75 |
A |
| IDRM |
pulsed reverse drain current |
Tmb = 25; pulsed; tp10 s |
- |
400 |
A |
| Avalanche ruggedness |
| WDSS |
Avalanche ruggedness |
unclamped inductive load; ID =75 A;
VDS55 V; VGS = 5 V; RGS = 50 W;
starting Tmb = 25 |
- |
333 |
mJ |
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by packageDescriptionN-channel enhancement mode field-effect power transistor BUK9510-55A in a plastic package using TrenchMOS™1 technology, eaturing very low on-state resistance.
Product availability:
BUK9510-55A in SOT78 (TO-220AB)
BUK9610-55A in SOT404 (D 2-PAK).
BUK9510-55A Data Sheet
