MOSFET RAIL PWR-MOS
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 154 A | ||
Resistance Drain-Source RDS (on) : | 0.0058 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Rail |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 55 | V | ||
VDGR | drain-gate voltage (DC) | RGS = 20 kW | 55 | V | |
VGS | gate-source voltage (DC) | ±15 | V | ||
ID | drain current (DC) | Tmb = 25; VGS = 5 V; Figure 2 and 3 | 154 | A | |
75 | A | ||||
Tmb = 100 ; VGS = 5 V; Figure 2 | 75 | A | |||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 ms; Figure 3 | 616 | A | |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | 300 | W | |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 |
N-channel enhancement mode field-effect power transistor BUK9506-55A in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);
BUK9E06-55A in SOT226 (I2-PAK).