Features: `n TrenchMOS™ technology` Q101 compliant` 175 rated` Logic level compatible.Application· Automotive and general purpose power switching: · 12 V and 24 V loads · Motors, lamps and solenoids.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VD...
BUK9240-100A: Features: `n TrenchMOS™ technology` Q101 compliant` 175 rated` Logic level compatible.Application· Automotive and general purpose power switching: · 12 V and 24 V loads · Motors, lamps and sol...
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
drain-source voltage (DC) |
- |
100 |
V | |
VDGR |
drain-gate voltage (DC) | RGS = 20 k |
- |
100 |
V |
VGS |
gate-source voltage (DC) |
- |
±10 |
V | |
VGSM |
non-repetitive gate-source voltage | tp 50 s |
- |
±15 |
V |
ID |
drain current (DC) | Tmb = 25; VGS = 5 V; Figure 2 and 3 |
- |
33 |
A |
Tmb = 100; VGS = 5 V; Figure 2 |
(1)- |
23.8 |
A | ||
IDM |
peak drain current | Tmb = 25; pulsed; tp 10 s; Figure 3 |
- |
135 |
A |
Ptot |
total power dissipation | Tmb = 25; Figure 1 |
- |
114 |
W |
Tstg |
Storage temperature |
-55 |
+175 |
||
Tj |
operating junction temperature |
-55 |
+175 |
||
Source-drain diode | |||||
IDR |
reverse drain current (DC) | Tmb = 25 |
- |
33 |
A |
IDRM |
peak reverse drain current | Tmb = 25; pulsed; tp 10 s |
- |
135 |
A |
Avalanche ruggedness | |||||
WDSS |
non-repetitive avalanche energy | unclamped inductive load; ID =25 A; VDS100V; VGS = 5 V; RGS = 50; starting Tmb= 25 |
- |
31 |
mJ |
N-channel enhancement mode field-effect power transistor BUK9240-100A in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK9240-100A in SOT428 (D-PAK).