MOSFET HIGH PERF TRENCHMOS
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Features: · Typical on-state resistance 5.8 mW· Q101 compliant· ESD and overvoltage protection· Mo...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 64 A | ||
Resistance Drain-Source RDS (on) : | 0.015 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 185 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-428 | Packaging : | Reel |
Technical/Catalog Information | BUK9217-75B,118 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 64A |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 4029pF @ 25V |
Power - Max | 167W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 35nC @ 5V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT428; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUK9217 75B,118 BUK921775B,118 |