MOSFET HIGH PERF TRENCHMOS
BUK7E2R7-30B,127: MOSFET HIGH PERF TRENCHMOS
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Features: *Integrated current sensor *Q101 compliant *ESD protection *Standard level compatib...
Features: *ESD protection* Integrated current sensor* Q101 compliant*Standard level compatible.App...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 241 A | ||
Resistance Drain-Source RDS (on) : | 0.0027 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | BUK7E2R7-30B,127 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 75A |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 6212pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 91nC @ 10V |
Package / Case | I²Pak, TO-220AB (3 straight leads + tab) |
FET Feature | Standard |
Drawing Number | 568; SOT226; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUK7E2R7 30B,127 BUK7E2R730B,127 |