BUK7E2R7-30B,127

MOSFET HIGH PERF TRENCHMOS

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BUK7E2R7-30B,127: MOSFET HIGH PERF TRENCHMOS

floor Price/Ceiling Price

US $ .94~.98 / Piece | Get Latest Price
Part Number:
BUK7E2R7-30B,127
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~3760
  • 3760~6000
  • Unit Price
  • $.98
  • $.94
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 241 A
Resistance Drain-Source RDS (on) : 0.0027 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0027 Ohms
Continuous Drain Current : 241 A


Parameters:

Technical/Catalog InformationBUK7E2R7-30B,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs2.7 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 6212pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs91nC @ 10V
Package / CaseI²Pak, TO-220AB (3 straight leads + tab)
FET FeatureStandard
Drawing Number568; SOT226; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUK7E2R7 30B,127
BUK7E2R730B,127



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