BUK7E11-55B,127

MOSFET HIGH PERF TRENCHMOS

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BUK7E11-55B,127: MOSFET HIGH PERF TRENCHMOS

floor Price/Ceiling Price

US $ .54~.58 / Piece | Get Latest Price
Part Number:
BUK7E11-55B,127
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~3710
  • 3710~6000
  • 6000~12000
  • Unit Price
  • $.58
  • $.56
  • $.54
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 84 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 84 A
Resistance Drain-Source RDS (on) : 0.011 Ohms


Parameters:

Technical/Catalog InformationBUK7E11-55B,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs11 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 2604pF @ 25V
Power - Max157W
PackagingTube
Gate Charge (Qg) @ Vgs37nC @ 10V
Package / CaseI²Pak, TO-220AB (3 straight leads + tab)
FET FeatureStandard
Drawing Number568; SOT226; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUK7E11 55B,127
BUK7E1155B,127



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