MOSFET TRENCHPLUS MOSFET
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Features: *Integrated current sensor *Q101 compliant *ESD protection *Standard level compatib...
Features: *ESD protection* Integrated current sensor* Q101 compliant*Standard level compatible.App...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 117 A | ||
Resistance Drain-Source RDS (on) : | 0.008 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Rail |
N-channel enhancement mode field-effect power transistor BUK7908-40AIE in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection.