MOSFET TRENCHPLUS MOSFET
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: *Integrated current sensor *Q101 compliant *ESD protection *Standard level compatib...
Features: *ESD protection* Integrated current sensor* Q101 compliant*Standard level compatible.App...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 140 A | ||
Resistance Drain-Source RDS (on) : | 0.007 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Rail |
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
- |
40 |
V | |
VDGS |
drain-gate voltage (DC) | IDG = 250 A |
- |
40 |
V |
VGS |
gate-source voltage (DC) |
- |
±20 |
V | |
ID |
drain current (DC) | Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
- |
140 |
A |
- |
75 |
A | |||
Tmb = 100 °C; VGS = 5 V; Figure 2 |
- |
75 |
S | ||
IDM |
drain current (peak value) | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
560 |
A |
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
272 |
W |
IDG(CL) |
drain-gate clamping current | tp = 5 ms; = 0.01 | - | 50 | |
IGS(CL) |
gate-source clamping current | continuous | - | 10 | |
tp = 5 ms; = 0.01 | - | 50 | |||
Visol(FET-TSD) |
FET to temperature sense diode isolation voltage | - | ±100 | ||
Tstg |
storage temperature |
-55 |
+175 |
°C | |
Tj |
junction temperature |
-55 |
+175 |
°C | |
Source-drain diode | |||||
IDR
|
reverse drain current (DC) | Tmb = 25 °C |
- |
140 |
A |
- |
75 |
A | |||
IDRM |
pulsed reverse drain current | Tmb = 25 °C; tp 10 s |
- |
560 |
A |
Clamping | |||||
EDS(CL)S |
non-repetitive drain-source clamping energy | unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 10 K; starting Tmb = 25 °C |
- |
1.4 |
J |
Electrostatic Discharge | |||||
Vesd |
electrostatic discharge voltage; pins 1,3,5 | Human Body Model; C = 100 pF; R = 1.5 k |
6 |
KV |
N-channel enhancement mode field-effect power transistor BUK7907-40ATC in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS diodes for clamping, (ESD) protection and temperature sensing.
Product availability:
BUK7107-40ATC in SOT426 (D2-PAK)
BUK7907-40ATC in SOT263B (TO-220AB).