BUK7905-40AIE

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.005 Ohms
Packaging : Rail
Continuous Drain Current : 155 A


Features:

* ESD protection 
* Integrated current sensor 
* Q101 compliant
* Standard level compatible.

Application

* Variable Valve Timing for engines 
* Electrical Power Assisted Steering.


Pinout

Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)			40	V
VDGR	drain-gate voltage (DC)	RGS = 20 kW		40	V
VGS	gate-source voltage (DC)			±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 10 V; Figure 2 and 3		155	A
				75	A
		Tmb = 100 ; VGS = 10 V; Figure 2		75	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp  10 us; Figure 3		620	A
Ptot	total power dissipation	Tmb = 25; Figure 1		272	W
IGS(CL)	gate-source clamping current	continuous		10	mA
		tp = 5 ms; d = 0.01		50	mA
Tstg	storage temperature		-55	+175
Tj	junction temperature		-55	+175

Description

N-channel enhancement mode field-effect power transistor BUK7905-40AIE in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.